Amorphyx AMNR (Amorphous Metal Nonlinear Resistor) technology combines the benefits of quantum tunneling - fastest switching speed, extremely low leakage current, and a simple thin film device structure - to create a high-performance backplane pixel circuit for premium LCD TVs and gaming monitors. The AMNR is a 2-terminal diode-based device with perfect I-V symmetry about 0V/0A. Its current-handling capability and threshold voltage scale with its physical dimensions.

The AMNR also replaces silicon and metal oxide switching TFTs in AMOLED and microLED pixel circuits. Combining with the IGZO AMeTFT technology, AMNR enables replacing LTPO with higher image resolution, from sub-Hz to >120Hz image refresh rates, and dramatically simpler backplane manufacturing processes on glass and flexible substrates.

AMNR operates on the principle of Fowler-Nordheim quantum tunneling - a conduction mechanism that does not require semiconductor metals as electron carriers. Fowler-Nordheim tunneling is the mechanism on which all non-volatile “flash” memory operates. AMNR extends Fowler-Nordheim into analog integrated circuit applications.

AMNR technology delivers these key features to thin film electronics

• a strong yet flexible materials stack optimized for flexible displays, fabricated at room temperature

• the combination of low leakage current and very fast switching speed required for enabling 0.1Hz-240Hz variable image refresh rate

• a simple structure that minimizes the importance of vertical alignment in photolithography - ideal for simplifying flexible display fabrication

• a smaller physical footprint than TFTs, enabling increased display resolution and aperture ratio