The speed of amorphous metal thin-film electronics comes from the smooth-as-glass surfaces of amorphous metals. Smoothness enables amorphous metals to support very thin high-K dielectrics. Thin high-K dielectrics are essential to speed, albeit for slightly different reasons for amorphous metal non-linear resistors (AMNR) and amorphous metal thin-film transistors (AMeTFT).


The flexibility of amorphous metal thin-film electrodes comes from the random atomic structure of amorphous metals. Having such a disordered structure also gives amorphous metals strength, leading to their use in sporting equipment, as well as micro-hinges for digital light processors in high-end theater projectors.


We have developed amorphous metal thin-film electronics as a simple alternative to the ever complicated solutions that display manufacturers have been forced to choose from. Quantum tunneling based electronics, such as the AMNR, are faster than thin-film transistors (TFT), have less physical layers, and do not require tight layer-to-layer registration like TFT. This makes them much simpler to manufacturer. On the other hand AMeTFT offer a display manufactures a way to 3X their typical TFT mobility, by simply replacing their gate and insulator materials. No complicated structures required in either case.